Device performance enhancement via a Si-rich silicon oxynitride buffer layer for the organic photodetecting device
Abstract An advanced organic photodetector (OPD) with a butter layer of Si-rich silicon oxynitride (SiOxNy) was fabricated.The detector structure is as follows: Indium tin oxide (ITO) coated glass substrate/SiOxNy(10 nm)/naphthalene-based donor:C60(1:1)/ITO.Values of x and y in SiOxNy were carefully controlled and the detector performances such as